15:00-15:15 [OEDI-9] Controllable amplification, absorption, and dispersion in double- cascade type four-level system of multiple quantum wells，严伟

JOINT POSTER SESSION, 14:45 to 17:30,Lobby, 1st Floor, WNLO

[OEDI-P-01] 张文甲，Modeling of optical configuration of tunable external-cavity diode lasers with Zemax

Abstract：

In this paper, a method to model the optical cavity of tunable external-cavity diode lasers by Zemax is proposed. Models of external optical cavity of Littrow and Littman-Metcalf configurations are built. And optimizations are performed to maximize the coupling efficiency of the external feedback. Analyses of the models are discussed and by programming a Zemax macro, the feedback coupling and the tuning curves are achieved. With the simulations, we propose a tuning method which uses a rotating collimating lens. This tuning method has been demonstrated by experiments.

[OEDI-P-02] 石隅，Low Power CW Pump Wavelength Conversion in a Silicon Microring Resonator

Abstract：

In this report we demonstrate wavelength conversion via four wave mixing (FWM) effect using 10 milliwatts CW pump power in the silicon microring resonator, which may lay a solid foundation in future applications like quantum information and high speed optical signal processing.

[OEDI-P-03] 张强，Realizing of a 80。Vertical Angle with MRIE in Etching of the Silica Mask Deposited in InP Substrate

Abstract：

The etching parameters for the silica mask deposited in InP substrate in our micro-nano fabrication platform is investigated. The experimental results show that a 80。vertical angle of silica waveguide can be obtained by MRIE with a parameters of 70 sccm CHF3, 1 sccm O2, and 80 W RF power. With these parameters, a microring with a 86.8。 vertical angle and a radius of 500 μm is obtained in InP substrate with ICP though the silica mask vertical angle utilizing the parameters for realizing 80。vertical angle is only 70。 due to the unstable characteristic of MRIE in our laboratory.

[OEDI-P-04]郁春潮，Slow light between two absorbing resonance in asymmetry double quantum dots

Abstract：

We proposed a slow light in the double resonance asymmetry QDs systems.with enhanced bandwith and compact dimension, compatible for the optical communication.

[OEDI-P-05] 杜鸣笛，Impact of groove defect depth in subwavelength metal grating on THz spoof SPPs

Abstract:

We proposed a groove defect depth effect THz spoof SPPs with better confined THz electric field distribution, which can be applied in THz frequency attenuator.

[OEDI-P-06] 张进，A new method for GaN / AlN quantum dots with uniform size in MOCVD

Abstract: We first time to fabricate GaN QDs via thermal decomposition of GaN film in H2 atmosphere. The obtained GaN QDs has a great quality and uniform size distribution.

[OEDI-P-07] 陈开胜，Cl2/CH4/H2-Inductively Coupled Plasma Etching of InP with Low Electrode Temperature

Abstract:

We are developing a dry-etching process of InP material with vertical and smooth sidewalls and Low electrode temperature.

[OEDI-P-08] 陈鑫，Application of Multi-mask on Clearing the UV- Nanoimprint
Lithography Residual Resist

Abstract:

UV-Nanoimprint Lithography(NIL) has been widely used in manufacturing gratings of Distributed Feedback Laser Diodes(DFB LDs) due to its high-resolution and low cost .However, UV-curable resist turns into high polymer after UV-exposure, which always can’t be eliminated completely, and the residual resist will affect following process and degrade devices performance. In this paper, a Multi-mask layer process to eliminate residual resist was demonstrated. In this process, a thin hard mask is deposited between wafer and UV-curable resist

[OEDI-P-09] 黄田野，Comparison of nonlinear-based approaches for all-optical clock recovery

Abstract:

We compare two different nonlinear fiber-based approaches for all-optical clock recovery (AOCR) at 40 Gb/s. Both involve mode-locking a semiconductor fiber laser (SFL); one is based on the use of a nonlinear optical loop mirror (NOLM) while the second exploits nonlinear polarization rotation (NPR). We assess the impact of input signal characteristics on the RMS timing jitter and power fluctuation. The results show that both approaches are capable of recovering a good quality clock signal over a large range of operating parameters

[OEDI-P-10]李玉涟，Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 γ-ray irradiation

Abstract:

The redshift (~54 meV) of the photoluminescence (PL) peak energy of blue InGaN/GaN LED exposed to 60Co γ-rays was observed. Time-resolved PL (TRPL) shows that the PL radiative time increases along with irradiance. The temperature-dependent PL and photoreflectance techniques show that γ-ray irradiance leads to higher carrier localization energies and larger Stokes’ shift, respectively. These facts suggest that the redshifts of the PL peak emission introduced by γ-ray irradiance mainly originated from the enhancement of indium fluctuation. The cathodoluminescent (CL) images of the samples before and after γ-ray irradiation are compared to verify the results.

[OEDI-P-11] 刘力，Tunable and Reconfigurable Notch Microwave Photonic Filters Using on-chip Cascaded Microring Resonators

Abstract:

We propose and experimentally demonstrate a tunable and reconfigurable notch microwave photonic filter (MPF) using two integrated microring resonators (MRRs) on a single silicon-on-insulator (SOI) chip. The free spectral ranges (FSRs) of two cascaded MRRs are 160 GHz and 165 GHz, respectively. Due to the vernier effect, the transmission spectrum of cascaded MRRs is a series of bimodal distribution whose interval is an arithmetic sequence. By locating the laser wavelength at the middle of different bimodal interval and fine tuning it properly, both central frequency and bandwidth of the notch MPF can be tunable. In the experiment, the tunability of central frequency and 3-dB bandwidth are demonstrated from 2.5 GHz to 17.5 GHz and from 6 GHz to 9.5 GHz, respectively. The best rejection ratio of the notch filter is larger than 40 dB. This approach will allow the implementation of low-cost, very compact, and integrated notch MPFs in a silicon chip.

[OEDI-P-12]秦毅，A filterless optical microwave generation by using frequency octupling technique

Abstract:

A filterless RoF system with frequency octupling is experimentally demonstrated. Optical microwave signals with 34 dB undesired sideband suppression ratios can be obtained. No penalty is observed after transmission over 50 km single-mode fiber.

[OEDI-P-13]谭斯斯，All-optical Differential Equation Solver Based on Microring Resonator

Abstract:

It is demonstrated that a single microring resonator with specific parameters behaves as an all-optical constant-coefficient first-order linear ordinary differential equation solver. The output at the drop port of a basic add-drop single microring resonator is proportional to the solution of the equation. Moreover, higher order linear ordinary differential equations can also be solved simply by cascading these microring resonators. Our simulated results have confirmed the feasibility of this simple approach to solve the equations for different values of the constant-coefficient and two considered input waveforms.

[OEDI-P-14] 熊辉，Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Abstract:

In this work, ZnO films with high crystal quality were grown by pulsed laser deposition (PLD) on different c-plane AlN/c-sapphire template thereby the thicknesses of AlN buffer layers varied from 150 to 300 nm. The properties of ZnO thin films were studied by using high-resolution X-ray diffraction, atomic force microscopy, photoluminescence spectroscopy, and Raman measurement. The comparative investigation results show that inserting an AlN buffer layer is an effective way to improve the crystal quality of ZnO films. Furthermore, the thickness of the AlN buffer layer plays an important role on the quality of ZnO films. The result of (0002) x-rocking curve with the full width at half maximum (FWHM) of 0.09°indicates that high-quality c-plane ZnO films can be achieved by using a 150 nm-thickness AlN/c-sapphire template. In the best knowledge of the authors, this is the minimum value reported at present for ZnO films grown on AlN/c-sapphire templates by PLD.

[OEDI-P-15] 王玘，Near-field Microwave Imaging System

Abstract：

The microwave imaging system is based on the newly developed spintronic Michelson interferometer, which can utilize the full coherence of the electromagnetic dynamics to investigate the propagating parameters of microwave in dielectric. By analyzing the phase and amplitude changes of the interference pattern, the dielectric constant measurement and metal detection are achieved.

[OEDI-P-16] 郑傲凌，Multi-functional photonic differentiators based on versatile demodulation of phase signals

Abstract:

We demonstrate a multifunctional differentiator using cascaded delayed interferometers.

[OEDI-P-17] 陈涛，Generation of degenerate entangled photon pairs by cascaded second-order nonlinearity in a single periodically poled LiNbO3 waveguide

Abstract:.

We proposed an entangled photon generation based cSFG/SPDC with highly efficient entangled photon pair generation

[OEDI-P-18] 黄章立，Infrared characteristics of VO2 thin films for smart window and laser protection

Abstract:

We propose and optimize the process parameters to bring down the transition temperature of VO2 films and make it suitable for smart window and laser protection applications.

[OEDI-P-19] 黄钊，A double taper Fabry-Perot cavity optical structure designed for hybrid lasers on SOI integrated circuit

Abstract:

We proposed a novel hybrid laser structure having a III-V taper-shaped rectangular F-P cavity bonded on a Silicon taper-shaped ridge waveguide with opposite taper direction. By operating the phase velocities of the individual waveguides, we can cause the optical power to be confined to each of the two waveguides. This is realized by controlling the geometry parameters of the two waveguides . Optical power is confined in the III-V material to get transmission gain,while in the double-taper area , part of the power is ordered to access into the silicon ridge waveguide as output of the laser,owing to the geometry parameters’ shifty.

[OEDI-P-20] 李小明，Direct and indirect intraband optical absorption due to transitions from discrete levels to continuum states in quantum dot system

Abstract:

We present model to calculate the direct and phonon-assisted intraband optical transition in the framework of the first-order perturbation theory and second-order perturbation theory, respectively.

[ OEDI-P-21] 覃翠，Gain recovery dynamics in SOAs with DFB grating under assist light injection

Abstract:

We proposed the SOAs with DFB grating under assist light injection. Both enhanced the effect of the assist light and shortened carriers recovery time are analyzed.

[OEDI-P-23] 左强，Multiple Phase-Shifted DFB laser Fabricated by Nanoimprint Lithography

Abstract:

Two symmetry λ/8 phase-shifts diffraction grating for DFB laser is mass produced by nanoimprint lithography (NIL). Threshold current of typical laser device is less than 15mA. Side mode suppression ratio (SMSR) is above 42dB even at 100mA current injection. Our results prove NIL is a promising tool for fabricating complex diffraction grating DFB laser.

[OEDI-P-24] 赵建宜，Experimental demonstration of Sixteen-Channel DFB Laser Array based on Nanoimprint Technology

Abstract:

A sixteen-channel monolithically integrated index-coupled distributed-feedback laser array has been fabricated using nanoimprint technology. Selective lasing wavelength with 300 GHz and 100 GHz frequency space are obtained. The fine tenability for individual laser in the array is achieved with a Ti-Au thin-film resistor integrated on the chip. The typical threshold current is between 10 mA and 15 mA without current in the thin-film resistor. The optical output power of each channel is about 6 mW at an injection current of 70 mA.

[OEDI-P-25] 郜雅，A Proposal for All-optical DPSK Precoder Using AlGaAs Microring Resonators

Abstract:

An all-optical DPSK precoder scheme based on AlGaAs microring resonators is proposed and numerically simulated. This scheme mainly utilizes the cross phase modulation (XPM) in microring resonators to obtain phase modulation (PM), and realizes the addition of phase shift through a feedback path consisting of a semiconductor optical amplifier (SOA) and another microring as the time delay element. This novel precoder accomplishes not only phase modulation but also differential encoding simultaneously in optical domain. The phase-interference resistance of 40Gb/s DPSK encoded by this scheme reaches up to 0.4 radians, which shows strong stability and great potential in future integrated all-optical communication.

[OEDI-P-26] 田武，Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by MOCVD

Abstract:

The properties of intersubband transition in AlGaN/GaN multi-quantum wells (MQWs) grown on different AlGaN templates by metalorganic chemical vapor deposition are investigated. The strain states of GaN wells are studied by Raman spectra and reciprocal space mappings (RSM), which shows that the GaN wells are compressively strained and the compressive strain is increased when the Al mole composition is varied from 0 to 0.3. The Fourier transform infrared spectrometer (FTIR) results show that the intersubband transition wavelength in the AlGaN/GaN MQWs can be tuned from 5.14 μm to 4.65 μm when the Al mole composition of the AlGaN template is increased. The results can be attributed to the quantum confined Stark effect.

[OEDI-P-27] 向磊，Simultaneous multi-channel RZ-OOK/DPSK to NRZ-OOK/DPSK format conversion based on integrated DI and AWG

Abstract:

We designed and fabricated a Delay Interferometer cascaded with an Arrayed-Waveguide Grating based on Silicon on Insulator. 4-channel Return-to-zero On off keying to Non-return-to-zero On off keying and Return-to-zero Differential Phase shift keying to Non-Return-to zero Differential Phase shift keying format conversions at 40 Gbit/s were realized with this integrated device, the output eye diagrams showed a good conversion performance.

[OEDI-P-28]袁小文，Modulation of Spontaneous Emission in 2D hybrid plasmonic–photonic crystal for the efficient coupling

Abstract:

The spontaneous emission (SE) of colloidal CdSe/ZnS quantum Dots (CQDs) modified by the hybrid plasmonic-photonic crystal is reported in this paper. By using spin coater, the spatial overlap between the CQDs and the surface resonance modes in this quasi-2D crystal slab is achieved. In this case, the coupling efficiency of them is enhanced and most excited CQDs radiate through the same surface mode. Thus, not only the angle emission distribution of SE is modified but also the changes of the average lifetime and the line-width almost reach up to 70%.

[OEDI-P-29] 廖健飞，Ultra-Flattened Chromatic Dispersion and Highly Nonlinear Photonic Crystal Fibers With Ultralow Confinement Loss Employing Hybrid Cladding

Abstract:

In this paper, two new types of dispersion-flattened photonic crystal fibers (DF-PCFs) with highly nonlinear and ultralow confinement loss are proposed. Results show that the ultra-flattened dispersion of 0.931 ps/(nm.km) (DF-PCF1) and 1.533 ps/(nm.km) (DF-PCF2) can be achieved in the wavelength range from 1.3 to 1.6 μm with confinement losses lower than 0.001 dB/km in the same wavelength range. Meanwhile, the nonlinear coefficients of our proposed PCFs are greater than 23.83 W-1km-1 (DF-PCF1) and 29.65 W-1km-1 (DF-PCF2) at the wavelength of 1.55 μm, and two near-zero dispersion values of 0.328 ps/(nm.km) (DF-PCF1) and -0.015 ps/(nm.km) (DF-PCF2) can also be obtained at the same wavelength. Furthermore, the influence of manufacturing imperfections of parameters on dispersion and nonlinearity is discussed to verify the robustness of our design.

[OEDI-P-31] 江桂英，Improvement of Remodulation Characteristics by Using Two-Section Reflective SOA for Colorless WDM-PON

Abstract:

We investigate the remodulaton characteristics of the two-section RSOA for colorless WDM-PON. By adjusting the currents of the two sections, we can improve the output extinction ratio（ER） and Q factor because it works as modulator, amplifier and equalizer at the same time.

[OEDI-P-32] 陈荟全，Hydrothermal Synthesis of ZnO Nanowires on GaN Quantum Dots

Abstract:

UV LED based on the structure of N-ZnO nanowires(NWs)/P-GaN has been widely studied nowadays. NWs increasing the luminous efficiency. However, in the present research, this sturcture has a big turn-on voltage as high as 3V[1]. We generate ZnO NWs on GaN quantum dots(QDs)/P-GaN. This method is expected to reduce the turn-on voltage of the devices and make the devices keep working stable at the same time.

[OEDI-P-34] 张芳，Ultrasmall Broad-band Polarizer Based on a metal-insulator-metal Waveguide Bragg Grating

Abstract:

An ultrasmall broad-band polarizer consisting of a dielectric grating sandwiched between two metal films is proposed and the mechanism of polarization-selective transmission is investigated using finite element method (FEM). Figure 1depicts the schematic of the proposed device, the refractive indices of the dielectric materials are chosen to be nH = 3.5 and nL =2.05, d and t stand for the period and thickness of the dielectric grating, respectively. The low-index and high-index dielectric regions are set to be the same, that is, w=w’=d/2.

[OEDI-P-35] 李洋，The effect of SiNx interlayer on Si-Al0.48Ga0.52N grown by MOCVD

Abstract:

Si-doped Al0.48Ga0.52N layers were grown on sapphire (0001) substrates using SiNx interlayer with different treat time. The crystal quality, strain states, surface, electrical and optical properties of four samples were investigated through High Resolution X-ray diffraction, Raman spectra, atomic force microscope, Hall measurement and photoluminescence. The mechanism of SiNx nano-mask in the growth process of n-Al0.48Ga0.52N was analyzed.

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[OEDI-P-38] 邹冰融，All-optical parallel NRZ-QPSK to RZ-QPSK format conversions Based on a Single SOA

Abstract:

All-optical format conversion is a key function in providing flexible management and interface for optical networks with different formats. In this paper, we propose and demonstrate multi-channel format conversions from the non-return-to-zero quadrature-phase-shift-keying (NRZ-QPSK) to the return-to-zero QPSK (RZ-QPSK) signals using a single semiconductor optical amplifier (SOA) and a delay interferometer (DI). The conversion from the NRZ-QPSK to RZ-QPSK is based on the cross phase modulation (XPM) effect, which is introduced by a synchronous optical clock signal with high input power, and subsequent detuned filtering. The amplitude of the NRZ-QPSK signal is converted to the RZ-QPSK signal with identical phase shift onto every input bit by the XPM effect. Parallel 4 channels format conversions from the NRZ-QPSK to the RZ-QPSK signals are experimentally achieved well with small Q penalty less than 2 dB.

[OEDI-P-39] 陈庆庆，A feasible method of growing low density InAs/GaAs QDs on Ge substrate by MOCVD

Abstract:

In this study, we found that InAs QDs density decreased with a higher V/III ratio within a certain extent. Considering the results and the former work in our group, we proposed a feasible method of growing low density InAs/GaAs QDs on Ge substrate by MOCVD.